Traps in 4H-SiC field-effect transistors characterized by capacitance- and current-mode deep-level transient spectroscopy

Z. Q. Fang; B. Claflin; D. C. Look; F. Chai; B. Odekirk

doi:10.1007/s11664-011-1741-7

Traps in 4H-SiC field-effect transistors characterized by capacitance- and current-mode deep-level transient spectroscopy

Z. Q. Fang, B. Claflin, D. C. Look, F. Chai, B. Odekirk

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2179-2186
Number of pages	8
Journal	Journal of Electronic Materials
Volume	40
Issue number	11
DOIs	https://doi.org/10.1007/s11664-011-1741-7
State	Published - Nov 2011

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

4H-SiC FATFETs
Capacitance-mode DLTS
Current-mode DLTS
Deep-level transient spectroscopy (DLTS)
Traps

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10.1007/s11664-011-1741-7

Cite this

@article{9089e32a03bf47dabc6091a124ff0625,

title = "Traps in 4H-SiC field-effect transistors characterized by capacitance- and current-mode deep-level transient spectroscopy",

keywords = "4H-SiC FATFETs, Capacitance-mode DLTS, Current-mode DLTS, Deep-level transient spectroscopy (DLTS), Traps",

author = "Fang, {Z. Q.} and B. Claflin and Look, {D. C.} and F. Chai and B. Odekirk",

year = "2011",

month = nov,

doi = "10.1007/s11664-011-1741-7",

language = "English",

volume = "40",

pages = "2179--2186",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "11",

}

TY - JOUR

T1 - Traps in 4H-SiC field-effect transistors characterized by capacitance- and current-mode deep-level transient spectroscopy

AU - Fang, Z. Q.

AU - Claflin, B.

AU - Look, D. C.

AU - Chai, F.

AU - Odekirk, B.

PY - 2011/11

Y1 - 2011/11

KW - 4H-SiC FATFETs

KW - Capacitance-mode DLTS

KW - Current-mode DLTS

KW - Deep-level transient spectroscopy (DLTS)

KW - Traps

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UR - http://www.scopus.com/inward/citedby.url?scp=83155172370&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1741-7

DO - 10.1007/s11664-011-1741-7

M3 - Article

AN - SCOPUS:83155172370

SN - 0361-5235

VL - 40

SP - 2179

EP - 2186

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

Traps in 4H-SiC field-effect transistors characterized by capacitance- and current-mode deep-level transient spectroscopy

ASJC Scopus Subject Areas

Keywords

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