Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy

Z. Q. Fang; D. C. Look; D. H. Kim; I. Adesida

doi:10.1063/1.2126145

Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy

Z. Q. Fang, D. C. Look, D. H. Kim, I. Adesida

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	182115
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	18
DOIs	https://doi.org/10.1063/1.2126145
State	Published - Oct 31 2005

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2126145

Cite this

@article{a1e897699fd34abb9817562d9eb709e0,

title = "Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy",

author = "Fang, {Z. Q.} and Look, {D. C.} and Kim, {D. H.} and I. Adesida",

year = "2005",

month = oct,

day = "31",

doi = "10.1063/1.2126145",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "18",

}

TY - JOUR

T1 - Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Kim, D. H.

AU - Adesida, I.

PY - 2005/10/31

Y1 - 2005/10/31

UR - http://www.scopus.com/inward/record.url?scp=27344454630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344454630&partnerID=8YFLogxK

U2 - 10.1063/1.2126145

DO - 10.1063/1.2126145

M3 - Article

AN - SCOPUS:27344454630

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182115

ER -

Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this