Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1929-1935
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	5
DOIs	https://doi.org/10.1116/1.2013312
State	Published - 2005
Externally published	Yes

ASJC Scopus Subject Areas

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title = "Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs",

author = "Zimmerman, \{Jeramy D.\} and Brown, \{Elliott R.\} and Gossard, \{Arthur C.\}",

year = "2005",

doi = "10.1116/1.2013312",

language = "English",

volume = "23",

pages = "1929--1935",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "5",

}

TY - JOUR

T1 - Tunable all epitaxial semimetal-semiconductor Schottky diode system

T2 - ErAs on InAlGaAs

AU - Zimmerman, Jeramy D.

AU - Brown, Elliott R.

AU - Gossard, Arthur C.

PY - 2005

Y1 - 2005

UR - https://www.scopus.com/pages/publications/31144434284

UR - https://www.scopus.com/pages/publications/31144434284#tab=citedBy

U2 - 10.1116/1.2013312

DO - 10.1116/1.2013312

M3 - Article

AN - SCOPUS:31144434284

SN - 1071-1023

VL - 23

SP - 1929

EP - 1935

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -