Ultrafast Photoresponse at 1.55 μm in InGaAs With Embedded Semimetallic ErAs Nanoparticles

D. C. Driscoll; M. P. Hanson; A. C. Gossard; E. R. Brown

doi:10.1063/1.1852092

Ultrafast Photoresponse at 1.55 μm in InGaAs With Embedded Semimetallic ErAs Nanoparticles

D. C. Driscoll, M. P. Hanson, A. C. Gossard, E. R. Brown

Research output: Contribution to journal › Article › peer-review

Abstract

We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ≤0.3 ps were achieved in optimized structures.

Original language	English
Article number	051908
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	5
DOIs	https://doi.org/10.1063/1.1852092
State	Published - Jan 31 2005
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Ultrafast Photoresponse at 1.55 μm in InGaAs With Embedded Semimetallic ErAs Nanoparticles",

abstract = "We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ≤0.3 ps were achieved in optimized structures.",

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AU - Driscoll, D. C.

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AU - Gossard, A. C.

AU - Brown, E. R.

PY - 2005/1/31

Y1 - 2005/1/31

N2 - We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ≤0.3 ps were achieved in optimized structures.

AB - We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ≤0.3 ps were achieved in optimized structures.

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Ultrafast Photoresponse at 1.55 μm in InGaAs With Embedded Semimetallic ErAs Nanoparticles

Abstract

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