Unpinning of GaAs surface Fermi level by 200°C molecular beam epitaxial layer

D. C. Look, C. E. Stutz, K. R. Evans

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@article{fd1e52fb1b9147409145b1589550639d,

title = "Unpinning of GaAs surface Fermi level by 200°C molecular beam epitaxial layer",

author = "Look, {D. C.} and Stutz, {C. E.} and Evans, {K. R.}",

year = "1990",

doi = "10.1063/1.104110",

language = "English",

volume = "57",

pages = "2570--2572",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "24",

}

TY - JOUR

T1 - Unpinning of GaAs surface Fermi level by 200°C molecular beam epitaxial layer

AU - Look, D. C.

AU - Stutz, C. E.

AU - Evans, K. R.

PY - 1990

Y1 - 1990

UR - http://www.scopus.com/inward/record.url?scp=3242841157&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242841157&partnerID=8YFLogxK

U2 - 10.1063/1.104110

DO - 10.1063/1.104110

M3 - Article

AN - SCOPUS:3242841157

SN - 0003-6951

VL - 57

SP - 2570

EP - 2572

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -