Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices

John D. Busbee; Lavern A. Starman; Maher S. Amer; Jason C. Reber; W. D. Cowan; John F. Maguire

Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices

John D. Busbee, Lavern A. Starman, Maher S. Amer, Jason C. Reber, W. D. Cowan, John F. Maguire

Wright State University

Research output: Contribution to conference › Presentation

Abstract

MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.

Original language	American English
State	Published - Oct 1 2000
Event	Proceedings of the 2000 IFAC Symposium - Duration: Oct 1 2000 → …

Conference

Conference	Proceedings of the 2000 IFAC Symposium
Period	10/1/00 → …

Disciplines

Engineering
Materials Science and Engineering
Mechanical Engineering

Access to Document

http://conf.uni-obuda.hu/airtc2000/18_AIRTC2000.pdf

Cite this

@conference{b53b8644e544451798f9c6a7af2087a2,

title = "Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices",

abstract = " MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.",

author = "Busbee, {John D.} and Starman, {Lavern A.} and Amer, {Maher S.} and Reber, {Jason C.} and Cowan, {W. D.} and Maguire, {John F.}",

year = "2000",

month = oct,

day = "1",

language = "American English",

note = "Proceedings of the 2000 IFAC Symposium ; Conference date: 01-10-2000",

}

TY - CONF

T1 - Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices

AU - Busbee, John D.

AU - Starman, Lavern A.

AU - Amer, Maher S.

AU - Reber, Jason C.

AU - Cowan, W. D.

AU - Maguire, John F.

PY - 2000/10/1

Y1 - 2000/10/1

N2 - MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.

AB - MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.

UR - https://corescholar.libraries.wright.edu/mme/315

UR - http://conf.uni-obuda.hu/airtc2000/18_AIRTC2000.pdf

M3 - Presentation

T2 - Proceedings of the 2000 IFAC Symposium

Y2 - 1 October 2000

ER -

Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices

Abstract

Conference

Disciplines

Access to Document

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Cite this