Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran; A. M. Wowchak; A. Osinsky; J. Xie; B. Hertog; B. Cui; D. C. Look; P. P. Chow

doi:10.1063/1.2970991

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran, A. M. Wowchak, A. Osinsky, J. Xie, B. Hertog, B. Cui, D. C. Look, P. P. Chow

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	082111
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2970991
State	Published - 2008

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2970991

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title = "Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures",

author = "Dabiran, {A. M.} and Wowchak, {A. M.} and A. Osinsky and J. Xie and B. Hertog and B. Cui and Look, {D. C.} and Chow, {P. P.}",

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journal = "Applied Physics Letters",

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T1 - Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

AU - Dabiran, A. M.

AU - Wowchak, A. M.

AU - Osinsky, A.

AU - Xie, J.

AU - Hertog, B.

AU - Cui, B.

AU - Look, D. C.

AU - Chow, P. P.

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DO - 10.1063/1.2970991

M3 - Article

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

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Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

ASJC Scopus Subject Areas

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