Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

  • A. M. Dabiran
  • , A. M. Wowchak
  • , A. Osinsky
  • , J. Xie
  • , B. Hertog
  • , B. Cui
  • , D. C. Look
  • , P. P. Chow

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number082111
JournalApplied Physics Letters
Volume93
Issue number8
DOIs
StatePublished - 2008

ASJC Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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