Abstract
Theoretical and experimental investigations were performed to show the application of X-ray crystal truncation rod scattering combined with X-ray reflectivity in the measurements of surface roughness and near-surface damage of mechanochemically polished wafers. By fitting the measured crystal truncation rod curves it has been shown that polished wafers are divided into three parts-irregular steps on the surface, a damaged thin layer beneath the surface and a perfect bulk. The results show that the root mean square of the surface roughness of mechanochemically polished Fe-doped and/or S-doped InP wafers is one to two atom layers, and that the lateral correlation length of the surface roughness is about 3000-7500 AA. The thickness of the damaged region is found to be about 1000 atom layers.
Original language | American English |
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Pages (from-to) | 1929-1932 |
Journal | Journal of Physics D: Applied Physics |
Volume | 27 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
Keywords
- X-ray diffraction
Disciplines
- Electrical and Computer Engineering