X-ray scattering from a rough surface and damaged layer of polished wafer

M. Li, Z. H. Mai, S. F. Cui, J. H. Li, Y. S. Gu, Y. T. Wang, Yan Zhuang

Research output: Contribution to journalArticlepeer-review

Abstract

Theoretical and experimental investigations were performed to show the application of X-ray crystal truncation rod scattering combined with X-ray reflectivity in the measurements of surface roughness and near-surface damage of mechanochemically polished wafers. By fitting the measured crystal truncation rod curves it has been shown that polished wafers are divided into three parts-irregular steps on the surface, a damaged thin layer beneath the surface and a perfect bulk. The results show that the root mean square of the surface roughness of mechanochemically polished Fe-doped and/or S-doped InP wafers is one to two atom layers, and that the lateral correlation length of the surface roughness is about 3000-7500 AA. The thickness of the damaged region is found to be about 1000 atom layers.
Original languageAmerican English
Pages (from-to)1929-1932
JournalJournal of Physics D: Applied Physics
Volume27
DOIs
StatePublished - 1994
Externally publishedYes

Keywords

  • X-ray diffraction

Disciplines

  • Electrical and Computer Engineering

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