ZnSe/CdTe/ZnSe heterostructures

S. Rubini; B. Bonanni; E. Pelucchi; A. Franciosi; A. Garulli; A. Parisini; Yan Zhuang; G. Bauer; V. Holý

doi:10.1116/1.1305921

ZnSe/CdTe/ZnSe heterostructures

S. Rubini, B. Bonanni, E. Pelucchi, A. Franciosi, A. Garulli, A. Parisini, Yan Zhuang, G. Bauer, V. Holý

Research output: Contribution to journal › Conference article › peer-review

Abstract

Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II–VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5–6 meV.

Original language	American English
Pages (from-to)	2263–2270
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	18
Issue number	4
DOIs	https://doi.org/10.1116/1.1305921
State	Published - Jul 2000
Externally published	Yes
Event	27th Conference on the Physics and Chemistry of Semiductor Interfaces - Salt Lake City, United States Duration: Jan 16 2000 → Jan 20 2000

Keywords

Exciton
Semiconductors
Heterostructures
Optical imaging
Crystal lattices
Epitaxy
Photoluminescence
Transmission electron microscopy

Disciplines

Electrical and Computer Engineering

Access to Document

10.1116/1.1305921

27th Conference on the Physics and Chemistry of Semiductor Interfaces
Zhuang, Y. (Participant)
2000
Activity: Participating in or organizing an event › Participation in conference

Cite this

@article{32c374ae3db04fed92be852e1b785d8c,

title = "ZnSe/CdTe/ZnSe heterostructures",

abstract = "Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II–VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5–6 meV.",

keywords = "Exciton, Semiconductors, Heterostructures, Optical imaging, Crystal lattices, Epitaxy, Photoluminescence, Transmission electron microscopy",

author = "S. Rubini and B. Bonanni and E. Pelucchi and A. Franciosi and A. Garulli and A. Parisini and Yan Zhuang and G. Bauer and V. Hol{\'y}",

year = "2000",

month = jul,

doi = "10.1116/1.1305921",

language = "American English",

volume = "18",

pages = "2263–2270",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

number = "4",

note = "27th Conference on the Physics and Chemistry of Semiductor Interfaces ; Conference date: 16-01-2000 Through 20-01-2000",

}

TY - JOUR

T1 - ZnSe/CdTe/ZnSe heterostructures

AU - Rubini, S.

AU - Bonanni, B.

AU - Pelucchi, E.

AU - Franciosi, A.

AU - Garulli, A.

AU - Parisini, A.

AU - Zhuang, Yan

AU - Bauer, G.

AU - Holý, V.

PY - 2000/7

Y1 - 2000/7

N2 - Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II–VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5–6 meV.

AB - Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II–VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5–6 meV.

KW - Exciton

KW - Semiconductors

KW - Heterostructures

KW - Optical imaging

KW - Crystal lattices

KW - Epitaxy

KW - Photoluminescence

KW - Transmission electron microscopy

U2 - 10.1116/1.1305921

DO - 10.1116/1.1305921

M3 - Conference article

SN - 2166-2746

VL - 18

SP - 2263

EP - 2270

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 4

T2 - 27th Conference on the Physics and Chemistry of Semiductor Interfaces

Y2 - 16 January 2000 through 20 January 2000

ER -

ZnSe/CdTe/ZnSe heterostructures

Abstract

Keywords

Disciplines

Access to Document

Activities

27th Conference on the Physics and Chemistry of Semiductor Interfaces

Cite this